• Measured the thickness of LTO layer done yesterday. The deposition rate remained similar as ~200 A/min.
• LPCVD run to deposit composite layers of silicon nitride: low-stress layer over stoichiometric nitride. Temperature had to be set to 805 degC, even though 870 degC, the setting for the last run, was desired. The reason is that, according to Bob, the temperature setting higher than 805 destroys the vacuum sealing after a couple of runs, which requres rebuilding of the sealing.