• Film thickness measurement for the composite nitride layers done on 3/18. Deposition rate turned out to be quite similar as before the tube cleaning.
• Lithography to define outlines for channels: mask #3.
• RIE of the trilayer: after the lithography was done, the patterning of the nitride was done at Argonne.
  • Etched 9 wafers. CF4 100% (41.8 sccm; saturated at 38.1 before the plasma was started), 35 mTorr, and 150W.
  • 19 minutes => the top composite nitride layer was completely etched. There was just this layer on the frames of the cells, and after the etch, it seemed to be have no color, meaning the silicon substrate had been exposed.
  • Regions aound the cantilevers that were supposed to be etched away had colors. There seemed to be that the bottom nitride layer still remained.
  • +5 minutes: 7 wafers were done; 2 waferes treated for 3 more minutes.