• Document for Ph.D. candidacy was signed by all committee members and turned in to Pat.
• Worked at MAL to do lithography, which was for the removal of bottom nitride around the tip. For test the feasibility, just two wafers were processed with different exposure time. Exposure time for one of the two wafer resulted in overexposure (actually, underexposure which later became overexposure after flood exposure). Mask #1 was used with image reversal PR.
• Headed for Argonne after the lithography was done. Nitride etch with CF4 plama was done. Etch result seemed to be fine.
• Came back to NU for SEM to verify the removal of nitride layer around the tip. LEO was booked until midnight; S4500 was used instead. Thus the quality of obtained images was not good enough to clearly see the etch result. Reserved the LEO SEM for tomorrow at 10:00 PM, which is the earliest available time.